At a glance
Chip Summary
| Item | Value |
|---|---|
| Designer | SK hynix |
| Type | HBM stack |
| Logic node | 1b DRAM; TSMC 12nm-class base die |
| Package | TSV stack, MR-MUF |
| Memory | 36 GB, 2,048-bit |
| Status | Volume production for NVIDIA Rubin |
| Rack platform | None |
Supplier ring
Who Makes Each Part
- Made in US
- Some US volume
- US planned
- Made abroad
- Not disclosed
| Component | Supplier | Role | Made at | US status | Evidence | Notes |
|---|---|---|---|---|---|---|
| MemoryDRAM core dies | SK hynix | Sole | Cheongju M15X and Icheon M16, Cheongju and Icheon, South Korea | Made abroad | Confirmed Source | 1b DRAM for HBM4 at M15X from Feb 2026, about 10,000 wafers a month to start; 12 dies of 24 Gb per 36 GB stack |
| HBM base die | TSMC | Primary | Not disclosed, Taiwan | Made abroad | Claimed Source | 12nm-class logic process; SK hynix reportedly weighing Intel for HBM4E base dies |
| PackagingAdvanced packaging | SK hynix | Primary | Icheon and Cheongju back-end (P&T3), Icheon and Cheongju, South Korea | Made abroad | Claimed Source | TSV stacking with MR-MUF; Cheongju P&T7 under construction, full operation end of 2027 |
| PackagingAdvanced packaging | SK hynix | Second source | West Lafayette plant, West Lafayette, IN, USA | US planned | Committed Source | Broke ground Aug 2026; HBM output 2H 2029 |
| Final test | SK hynix | Primary | Not disclosed, South Korea | Made abroad | Inferred | Known-good-stack test done in-house |
US share
What Is Made, or Planned, in the US
- Packaging: SK hynix, West Lafayette plant (us planned). Broke ground Aug 2026; HBM output 2H 2029
Record
Dataset Record
- Dataset
- Supplier ring for SK hynix HBM4: 5 rows from sx_chip_rings
- Sources
- Source link on each row
- Last verified
- 2026-10