Power semiconductors manage the conversion, control, and distribution of electrical energy in devices and systems ranging from EV drivetrains to renewable energy inverters and industrial automation. They include legacy silicon devices (MOSFETs, IGBTs) and wide-bandgap semiconductors (SiC, GaN) that offer higher efficiency, faster switching, and greater thermal performance. As electrification expands, power devices are becoming a strategic bottleneck for automotive, grid, and industrial sectors.
Role in the Semiconductor Ecosystem
- Enable efficient conversion between AC and DC across EVs, solar inverters, and industrial drives.
- Key to electrification megatrends: EV powertrains, charging, renewable energy integration, and BESS (Battery Energy Storage Systems).
- SiC and GaN adoption is accelerating as silicon-based MOSFETs and IGBTs reach performance limits.
- Strategic for energy autonomy, as seen in Tesla’s vertically integrated inverter + BESS designs.
Device Categories
- MOSFETs: Legacy silicon devices, widely used in consumer electronics and low/mid-voltage power management.
- IGBTs: High-voltage switching devices for industrial drives, rail, and older EV platforms.
- SiC (Silicon Carbide): Dominant in EV inverters, fast chargers, solar inverters, and grid equipment.
- GaN (Gallium Nitride): Emerging in fast chargers, data center PSUs, aerospace, and RF power stages.
Power Device Roadmap
Vendor |
Device Type |
Current Products |
Target Applications |
Approx. ASP |
Notes |
Infineon |
SiC MOSFETs, IGBTs |
CoolSiC, Trench IGBT7 |
EV inverters, charging, industrial drives |
$5–$50+ |
Largest power semiconductor vendor globally |
STMicro |
SiC MOSFETs, GaN FETs |
STPOWER SiC, STi2GaN |
EVs (Tesla partner), solar, BESS, charging |
$5–$30 |
Supplies SiC to Tesla EVs and energy products |
Wolfspeed |
SiC wafers & devices |
C3M SiC MOSFETs |
EV drivetrains, aerospace, industrial |
$10–$80+ |
Vertically integrated; major U.S. SiC supplier |
onsemi |
SiC MOSFETs, IGBTs |
EliteSiC, Trench IGBT |
EVs, solar, energy storage |
$5–$40 |
Scaling aggressively in SiC |
GaN Systems (Infineon) |
GaN HEMTs |
GS-065 series |
Fast chargers, aerospace, RF |
$2–$20 |
Leader in GaN before Infineon acquisition |
Top 10 Power Semiconductor Vendors
Rank |
Vendor |
Core Products |
Strengths |
Notes |
1 |
Infineon Technologies |
SiC MOSFETs, IGBTs, MOSFETs, GaN (via acquisition) |
Broadest portfolio; automotive, industrial, renewables |
#1 global power semiconductor supplier |
2 |
STMicroelectronics |
SiC MOSFETs, GaN FETs, IGBTs |
Strong in EVs (Tesla, Hyundai) and solar/BESS |
Key Tesla SiC supplier for EVs + Megapack |
3 |
onsemi |
SiC MOSFETs, IGBTs, MOSFETs |
Scaling SiC production; strong auto/industrial pipeline |
U.S. supplier pushing for EV partnerships |
4 |
Wolfspeed |
SiC wafers, MOSFETs, diodes |
Vertically integrated SiC leader; expanding 200 mm wafers |
Pure-play WBG supplier; key to EV supply chain |
5 |
Rohm Semiconductor |
SiC MOSFETs, IGBTs |
Early SiC pioneer; auto + industrial focus |
Supplies SiC for automotive inverters (e.g., Toyota) |
6 |
Mitsubishi Electric |
IGBTs, SiC modules |
Rail, grid, industrial drives |
Longtime leader in high-voltage power modules |
7 |
Fuji Electric |
IGBTs, SiC power modules |
Strong in industrial and renewable sectors |
One of Japan’s legacy power device giants |
8 |
GaN Systems (Infineon) |
GaN HEMTs |
Compact fast chargers, aerospace, RF power |
Acquired by Infineon in 2023 |
9 |
Navitas Semiconductor |
GaNFast power ICs |
Consumer fast chargers, laptops, data centers |
Fabless GaN specialist with strong IP portfolio |
10 |
Hitachi Power Devices |
IGBTs, SiC prototypes |
Industrial + energy focus |
Part of Japan’s diversified electronics ecosystem |
Supply Chain Bottlenecks
Power semiconductors face unique supply chain challenges compared to logic and memory:
- SiC wafers: Wolfspeed, Coherent, and a handful of others dominate supply; scaling to 200 mm is ongoing.
- GaN on Si: Foundry capacity is limited; GaN epitaxy is still maturing for high-volume power markets.
- Automotive qualification: Multi-year validation cycles make supply substitution difficult once a vendor is designed in.
- Substrate bottlenecks: SiC boule growth is slow, with yield and defect density as critical choke points.
Market Outlook
The power semiconductor market was valued at ~$45B in 2023 and is projected to exceed ~$80B by 2030 (~8% CAGR). SiC devices are expected to capture a growing share of EV drivetrains and charging infrastructure, while GaN adoption expands in fast chargers, aerospace, and data center PSUs. Tesla and other vertically integrated OEMs are accelerating the shift to SiC/GaN by designing inverters, chargers, and energy storage systems around these technologies.
Technology Transition by Application Base
Application Base |
Legacy Technology |
Current Transition |
Future Outlook |
Notes |
EV Drivetrains |
Silicon IGBTs |
Shift to SiC MOSFETs (Tesla, BYD, VW) |
Wider GaN adoption for 400–800V systems (post-2030) |
SiC dominant in high-voltage inverters; GaN possible in compact, lower-voltage EVs |
EV Charging |
Silicon MOSFETs |
SiC in DC fast chargers (>350 kW) |
GaN for onboard chargers and compact wallboxes |
SiC enables high efficiency and smaller cooling systems in high-power chargers |
Solar & BESS Inverters |
Silicon MOSFETs / IGBTs |
Transition to SiC modules (Tesla Megapack, SMA, Huawei) |
GaN expected in residential/commercial string inverters |
Efficiency gain reduces thermal management costs, improving LCOE |
Industrial Drives |
IGBT modules |
Gradual SiC adoption in high-performance sectors |
Mixed SiC + GaN in robotics, automation, factory electrification |
IGBTs remain entrenched due to cost/performance balance |
Data Centers |
Silicon MOSFETs |
Early GaN adoption in power supplies (PSUs) |
SiC + GaN hybrid power stages in AI/ML clusters |
GaN’s fast switching improves PSU density and efficiency; SiC for high-voltage feeds |
Aerospace & Defense |
Si-based RF & power devices |
GaN adoption in radar and RF power amplifiers |
Expanded GaN use in electrified aircraft and satellites |
GaN valued for high-frequency, high-temperature resilience |
Global Market Share by Material
Material / Device |
2023 Market Share (%) |
2030 Projected Share (%) |
CAGR (2023–2030) |
Notes |
Silicon MOSFETs |
50% |
30% |
~2–3% |
Still dominant in consumer and low-voltage electronics |
Silicon IGBTs |
25% |
15% |
Flat to declining |
Remain entrenched in industrial and rail; displaced in EVs |
SiC MOSFETs |
15% |
35% |
~20%+ |
Fastest growth; EV drivetrains, fast chargers, solar, BESS |
GaN HEMTs |
5% |
15% |
~25%+ |
Rapid adoption in chargers, data centers, aerospace |
Other (GaAs, InP, niche) |
5% |
5% |
Stable |
Used in RF/microwave and aerospace/defense |