Manufacturing


Silicon Wafer Deposition


The cleaned wafers are dried and loaded into a quartz wafer holder called a boat. Once the boat is loaded, the wafers are ready for the oxidation process.

The silicon dioxide layer is both an insulating layer on the silicon surface and a preferential masking layer during the fabrication sequence.

Typical films deposited by CVD processes include: Epitaxial Silicon Epitaxial Compound Semiconductors Polycrystalline Silicon Dielectric Thin Films Silicon Dioxide (including P- and B-doped Oxides) Aluminum Oxide Low-k Dielectrics (SiO-F, DLC, amorphous C-F) Silicon Nitride Titanium Nitride Tantalum Nitride Transition Metal Oxides (i.e. TiO2, ZrO2, Hf2O5, Ta2O5) Metals (Al, W, Cu) Silicides (WSix, CoSix)

Commercially, mercury cadmium telluride is of continuing interest for detection of infrared radiation. Consisting of an alloy of CdTe and HgTe, this material can be prepared from the dimethyl derivatives of the respective elements.

expose to O2 at high temp to create layer of silicon dioxide. Silane and ammonia gases form silicon nitride by CVD. - Oxidation furnace - Nitride furnace Developer agent

Chemical Vapor Deposition (CVD)

Low Pressure Chemical Vapor Deposition - LPCVD Plasma Enhanced Chemical Vapor Deposition - PECVD Sub-Atmospheric Pressure Chemical Vapor Deposition - SACVD Atmospheric Pressure Chemical Vapor Deposition - APCVD Ultra-High Vacuum Chemical Vapor Deposition - UHV-CVD Atomic Layer Deposition - ALD
Element Symbol State Use

Physical Vapor Deposition (PVD)

Thermal evaporation Sputtering Epitaxial Deposition - Epi