FABS


Semiconductor Chemicals


Process chemicals are critical to the semiconductor manufacturing process, as they are used to clean, etch, and deposit materials onto the surface of the semiconductor wafer. Each stage of the manufacturing process requires a specific set of chemicals, with varying degrees of purity and concentration, to achieve the desired results.

Cleaning chemicals, for instance, are used to remove impurities and contaminants from the wafer's surface before any fabrication can take place. These chemicals are typically composed of acids, bases, or solvents and can include hydrofluoric acid (HF), ammonium hydroxide (NH4OH), and hydrogen peroxide (H2O2).

Etching chemicals, on the other hand, are used to remove specific layers from the surface of the wafer to create patterns or structures. Etching can be either a wet or dry process and utilizes chemicals such as hydrochloric acid (HCl), nitric acid (HNO3), and sulfuric acid (H2SO4).

Deposition chemicals are used to add new layers of material to the wafer, and can include metal films, dielectric materials, and semiconductors. Chemical vapor deposition (CVD) and physical vapor deposition (PVD) are two common deposition techniques used in the semiconductor industry, which require different sets of chemicals.

Photoresist chemicals are used in photolithography processes to transfer patterns onto the wafer, and planarization chemicals, which are used to flatten the wafer's surface and improve yield.

The specific set of process chemicals used in semiconductor manufacturing will depend on the exact fabrication process and the materials being used. Some of the most commonly used process chemicals in semiconductor manufacturing include:

Hydrofluoric acid (HF)
Ammonium hydroxide (NH4OH)
Hydrogen peroxide (H2O2)
Hydrochloric acid (HCl)
Nitric acid (HNO3)
Sulfuric acid (H2SO4)
Silicon tetrachloride (SiCl4)
Titanium tetrachloride (TiCl4)
Phosphine (PH3)
Arsine (AsH3)
Boron trichloride (BCl3)
Trimethyl aluminum (TMA)
Tungsten hexafluoride (WF6)
Silane (SiH4)
Dichlorosilane (SiH2C12)

Other chemicals and compounds used during the semiconductor manufacturing process include:

Chemical / Compounds
(L)-Ethyl lactate
1,1,1-Trichloroethane
1,2-Dichloroethylene, all isomers
1-Methoxy-2-propyl acetate
1-Nitropropane
2,2,6,6-Tetrabromobisphenol A
2,4,6,8-Tetramethylcyclotetrasiloxane
2-Butanone
2-Butoxyethanol
2-Ethoxyethanol
2-Ethoxyethyl acetate
2-Methoxyethanol
2-Methylimidazole
4-Chloro-2-methylphenol
Acetic acid
Acetone
Acetonitrile
Alloy 42
Aluminum
Aluminum
Aluminum nitride
Aluminum phosphide
Aluminum tris(8-hydroxyquinoline)
Ammonia
Ammonium fluoride
Ammonium persulfate
Anatase
Antimony
Antimony
Antimony trichloride
Antimony trioxide
Argon
Arsenic
Arsenic pentafluoride
Arsenic trioxide
Arsenic trisulfide
Arsine
Bis(dimethylamino)dimethylsilane
Bismuth
Bismuth telluride
Bismuth telluride
Bisphenol A
Boron
Boron Nitride
Boron nitride
Boron oxide
Boron tribromide
Boron trichloride
Boron trifluoride
Borophosphosilicate glass
Cadmium
Cadmium oxide
Cadmium selenide
Cadmium sulfide
Cadmium telluride
Carbon tetrachloride
Chromium
Chromium trioxide
Chromium(III) oxide
Cobalt
Cobaltic-cobaltous oxide
Cobaltous oxide
Colophony
Copper
Copper Indium Gallium Selenide (CIGS)
Copper(II) oxide
Cupric sulfide
Cuprous selenide
Cyclohexyl methacrylate
Decaborane
Diborane
Dichlorosilane
Diethanolamine
Diethyl oxalate
Diethylene glycol dimethyl ether
Diethylene glycol monobutyl ether
Diethylsilane
Dimethyl acetamide
Dimethyl sulfoxide
Dimethylamine borane
Dimethylformamide
Dodecyl and tetradecyl glycidyl ethers
Epichlorohydrin
Ethanolamine
Ethyl lactate
Ethyl silicate
Ethyl-3-ethoxypropionate
Formaldehyde
Gallium
Gallium
Gallium arsenide
Gallium Manganese Arsenide (GaAs)
Gallium nitride
Gallium oxide
Gallium phosphide
Gallium trichloride
Germanium
Germanium dioxide
Germanium telluride
Germanium tetrachloride
Germanium tetrafluoride
Germanium tetrahydride
Gold
Hafnium
Helium
Hexachlorodisilane
Hexafluorobutadiene
Hexamethyldisilazane
Hydrazine
Hydrogen chloride
Hydrogen fluoride
Hydrogen peroxide
Hydrogen selenide
Indium
Indium arsenide
Indium nitride
Indium phosphide
Isopropyl alcohol
Kovar
Lead
Lead titanate
Lead zirconate titanate
Lead(II) sulfide
Lead(II) telluride
Manganese(II) oxide
Manganese(III) oxide
Melamine
Mercuric telluride
Mercury(II) selenide
Methyl alcohol
Methyl cellosolve acetate
Methyl formate
Methylchloro-isothiazolinone
Molybdenum disilicide
Molybdenum Disulfide
N-(2-Hydroxyethyl)ethylenediamine
n-Butyl acetate
n-Butyl alcohol
N-Methyl-2-pyrrolidone
Nickel
Nickel carbonyl
Nickel(II) oxide
Nitric acid
Nitrobenzene
Nitrogen trifluoride
Octamethyltrisiloxane
Oxirane
Pentaborane
Pentaerythritol triacrylate
Perfluoro compounds, C5-18
Perfluoroisobutylene
Perfluorooctane sulfonic acid
Perfluorotributylamine
Perylene
Phenol
Phenol-formaldehyde resin
Phosphine
Phosphoric acid
Phosphorus (yellow)
Phosphorus oxychloride
Phosphorus pentafluoride
Phosphorus pentoxide
Phosphorus tribromide
Phosphorus trichloride
Platinum silicate
Platinum, soluble salts
Polysilicon
Potassium hydroxide
Propargyl alcohol
Quartz
Rhenium
Rubidium
Sapphire
Scandium
Scandium nitride
Selenium hexafluoride
Selenourea
Sichrome
Silica, amorphous
Silicic acid
Silicon
Silicon Carbide (SiC)
Silicon dioxide
Silicon nitride
Silicon nitride
Silicon tetrachloride
Silicon tetrahydride
Silver
Sodium hydroxide
Stibine
Stoddard solvent
Strontium titanate
Sulfolane
Sulfuric acid
Tellurium
tert-Butylarsine
Tetrafluoroboric acid
Tetramethyl ammonium hydroxide
Tetramethylsilane
Thallium
Thallium selenide
Tin
Tin(II) oxide
Tin(IV) oxide
Titanium dioxide
Titanium nitride
Toluene
Trichlorosilane
Triethyl borate
Triethylindium
Trifluoro(tetrahydrofuran)boron
Trimellitic anhydride
Trimethylaluminum
Trimethylborane
Trimethylgallium
Trimethylindium
Tungsten
Vinyltrimethylsilane
Xylene isomers
Zinc chloride fume
Zinc oxide
Zinc telluride
Zirconium boride