Silicon Wafer Photoresist Types

broadband, I-Line, 248nm, 193nm, e-beam, positive, negative, wet and dry resists.

Substrate preparation – The substrate is cleaned, then goes through a dehydration bake and/or an adhesion promoter is added in order to prepare the wafer for the rest of the process. Photoresist spin coating – A thin, uniform coating made from a mixture of photoresists and solvents is deposited via spin-coating. The film is deposited either while the wafer is spinning (dynamic dispense) or not spinning (static dispense). Prebake – After spin-coating, 20-40% of the film is still solvent. The addition of a prebake dries the photoresist and stabilizes the film. This step reduces thickness, changes the properties of film, improves adhesion, and makes it less susceptible to particle contamination. (Photolithography) Strip photoresist – Chemical removal or etching gets rid of all remaining photoresist to produce the final pattern on the wafer.

Chemical Vapor Deposition (CVD)

Element	Symbol	State	Use

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Physical Vapor Deposition (PVD)

Related Coverage

Metrology & Inspection | Photolithography: DUV, EUV & High-NA | Silicon Wafer Cleaning Methods | Silicon Wafer Doping: N-Type & P-Type | Silicon Wafer Etching Methods | Silicon Wafer Film Deposition | Thin-Film Deposition