Micron Boise ID2 (DRAM)

Micron - Boise, Idaho - Pre-Construction

Capacity of Micron Boise ID2 (DRAM) against the largest dram fabs in the SemiconductorX dataset, in thousand wafer starts a month DRAM FABS, THOUSAND WAFERS A MONTH Samsung Pyeongtaek P1-P4 300 Kioxia Yokkaichi 250 SK Hynix Icheon M16 200 Samsung Xian NAND 130 SK Hynix Wuxi 120 Kioxia Kitakami 100 YMTC Wuhan Fab 1 100 YMTC Wuhan Fab 2 100 Micron Hiroshima 90 Micron Singapore 80 CXMT Hefei Phase 2 60 CXMT Shenzhen 50 INDIGO: US FABS. CAPACITY IS THE DATASET ESTIMATE; MOST OPERATORS DO NOT DISCLOSE IT.
Operator
Micron
Node
Not disclosed
Wafer
300mm
Capacity
Not disclosed
Opened
2028
US status
US planned

Fab record

Fab Record

Every field of the FAB216 row in the SemiconductorX fab dataset.

Fab record FAB216
GroupFieldValue
IdentityFab IDFAB216
NameMicron Boise ID2 (DRAM)
OperatorMicron
Parent companyMicron
LocationCityBoise
State or regionIdaho
CountryUSA
Region group
Supply-chain risk
ProcessFab typeMemory
CategoryMemory
Process node
Wafer size300mm
ProductsDRAM
Customers
StatusStatusPre-Construction
Year opened or due2028
CapacityNot disclosed
US statusUS planned
SourcesSource
Source linkLink
AustinIO pageNone
Last verified2026-10

Same operator

Other Micron Fabs

Same type, in the US

Other US DRAM Fabs

Record

Dataset Record

Dataset
SemiconductorX fab dataset (fabs2026), row FAB216
Sources
See the source link in the record
Last verified
2026-10