Micron Taichung (DRAM/HBM)

Micron - Taichung, Taiwan - 1-beta/1-gamma DRAM - Operational

Capacity of Micron Taichung (DRAM/HBM) against the largest dram fabs in the SemiconductorX dataset, in thousand wafer starts a month DRAM FABS, THOUSAND WAFERS A MONTH Samsung Pyeongtaek P1-P4 300 Kioxia Yokkaichi 250 SK Hynix Icheon M16 200 Samsung Xian NAND 130 SK Hynix Wuxi 120 Kioxia Kitakami 100 YMTC Wuhan Fab 1 100 YMTC Wuhan Fab 2 100 Micron Hiroshima 90 Micron Singapore 80 CXMT Hefei Phase 2 60 CXMT Shenzhen 50 INDIGO: US FABS. CAPACITY IS THE DATASET ESTIMATE; MOST OPERATORS DO NOT DISCLOSE IT.
Operator
Micron
Node
1-beta/1-gamma DRAM
Wafer
300mm
Capacity
Not disclosed
Opened
Not disclosed
US status
Made abroad

Fab record

Fab Record

Every field of the FAB214 row in the SemiconductorX fab dataset.

Fab record FAB214
GroupFieldValue
IdentityFab IDFAB214
NameMicron Taichung (DRAM/HBM)
OperatorMicron
Parent companyMicron
LocationCityTaichung
State or regionTaichung
CountryTaiwan
Region group
Supply-chain risk
ProcessFab typeMemory
CategoryMemory
Process node1-beta/1-gamma DRAM
Wafer size300mm
ProductsDRAM, HBM
Customers
StatusStatusOperational
Year opened or due
CapacityNot disclosed
US statusMade abroad
SourcesSource
Source linkNone
AustinIO pageNone
Last verified2026-10

Same operator

Other Micron Fabs

Same type, in the US

Other US DRAM Fabs

Record

Dataset Record

Dataset
SemiconductorX fab dataset (fabs2026), row FAB214
Sources
See the source link in the record
Last verified
2026-10