GlobalFoundries Burlington Fab 9 (GaN-on-Si)

GlobalFoundries - Essex Junction, Vermont - 80V and 650V GaN-on-Si - Ramp

Licensed TSMC GaN processes; Navitas production expected later in 2026

Capacity of GlobalFoundries Burlington Fab 9 (GaN-on-Si) against the largest gan power and rf fabs in the SemiconductorX dataset, in thousand wafer starts a month GAN POWER AND RF FABS, THOUSAND WAFERS A MONTH Infineon GaN-on-Si 5 Transphorm Goleta GaN Fab 3 INDIGO: US FABS. CAPACITY IS THE DATASET ESTIMATE; MOST OPERATORS DO NOT DISCLOSE IT.
Operator
GlobalFoundries
Node
80V and 650V GaN-on-Si
Wafer
200mm
Capacity
Not disclosed
Opened
2026
US status
Some US volume

Fab record

Fab Record

Every field of the FAB141 row in the SemiconductorX fab dataset.

Fab record FAB141
GroupFieldValue
IdentityFab IDFAB141
NameGlobalFoundries Burlington Fab 9 (GaN-on-Si)
OperatorGlobalFoundries
Parent companyGlobalFoundries
LocationCityEssex Junction
State or regionVermont
CountryUSA
Region groupUS Domestic
Supply-chain riskLow
ProcessFab typeGaN
CategoryGaN
Process node80V and 650V GaN-on-Si
Wafer size200mm
ProductsGaN power ICs
CustomersNavitas
StatusStatusRamp
Year opened or due2026
CapacityNot disclosed
US statusSome US volume
SourcesSourceElectronic Design, Dec 2025
Source linkLink
AustinIO pageNone
Last verified2026-10

Same operator

Other GlobalFoundries Fabs

Same type, in the US

Other US GaN Power and RF Fabs

Record

Dataset Record

Dataset
SemiconductorX fab dataset (fabs2026), row FAB141
Sources
Electronic Design, Dec 2025
Last verified
2026-10