RTX Raytheon Andover (GaN-on-SiC)

RTX (Raytheon) - Andover, Massachusetts - GaN-on-SiC HEMT - Operational

Captive; not a merchant supplier

Capacity of RTX Raytheon Andover (GaN-on-SiC) against the largest gan power and rf fabs in the SemiconductorX dataset, in thousand wafer starts a month GAN POWER AND RF FABS, THOUSAND WAFERS A MONTH Infineon GaN-on-Si 5 Transphorm Goleta GaN Fab 3 INDIGO: US FABS. CAPACITY IS THE DATASET ESTIMATE; MOST OPERATORS DO NOT DISCLOSE IT.
Operator
RTX (Raytheon)
Node
GaN-on-SiC HEMT
Wafer
100/150mm
Capacity
Not disclosed
Opened
1990s
US status
Made in US

Fab record

Fab Record

Every field of the FAB143 row in the SemiconductorX fab dataset.

Fab record FAB143
GroupFieldValue
IdentityFab IDFAB143
NameRTX Raytheon Andover (GaN-on-SiC)
OperatorRTX (Raytheon)
Parent companyRTX
LocationCityAndover
State or regionMassachusetts
CountryUSA
Region groupUS Domestic
Supply-chain riskLow
ProcessFab typeGaN
CategoryGaN
Process nodeGaN-on-SiC HEMT
Wafer size100/150mm
ProductsRadar and electronic warfare RF
CustomersRaytheon programs
StatusStatusOperational
Year opened or due1990s
CapacityNot disclosed
US statusMade in US
SourcesSourceRTX
Source linkNone
AustinIO pageNone
Last verified2026-10

Same operator

Other RTX Fabs

No other fabs from this operator are in the dataset.

Same type, in the US

Other US GaN Power and RF Fabs

Record

Dataset Record

Dataset
SemiconductorX fab dataset (fabs2026), row FAB143
Sources
RTX
Last verified
2026-10