Samsung Hwaseong (DRAM)

Samsung Memory - Hwaseong, South Korea - 1a-1b nm DRAM - Operational

Capacity of Samsung Hwaseong (DRAM) against the largest dram fabs in the SemiconductorX dataset, in thousand wafer starts a month DRAM FABS, THOUSAND WAFERS A MONTH Samsung Pyeongtaek P1-P4 300 Kioxia Yokkaichi 250 SK Hynix Icheon M16 200 Samsung Xian NAND 130 SK Hynix Wuxi 120 Kioxia Kitakami 100 YMTC Wuhan Fab 1 100 YMTC Wuhan Fab 2 100 Micron Hiroshima 90 Micron Singapore 80 CXMT Hefei Phase 2 60 CXMT Shenzhen 50 INDIGO: US FABS. CAPACITY IS THE DATASET ESTIMATE; MOST OPERATORS DO NOT DISCLOSE IT.
Operator
Samsung Memory
Node
1a-1b nm DRAM
Wafer
300mm
Capacity
Not disclosed
Opened
Not disclosed
US status
Made abroad

Fab record

Fab Record

Every field of the FAB210 row in the SemiconductorX fab dataset.

Fab record FAB210
GroupFieldValue
IdentityFab IDFAB210
NameSamsung Hwaseong (DRAM)
OperatorSamsung Memory
Parent companySamsung Electronics
LocationCityHwaseong
State or regionGyeonggi
CountrySouth Korea
Region group
Supply-chain risk
ProcessFab typeMemory
CategoryMemory
Process node1a-1b nm DRAM
Wafer size300mm
ProductsDRAM
Customers
StatusStatusOperational
Year opened or due
CapacityNot disclosed
US statusMade abroad
SourcesSource
Source linkNone
AustinIO pageNone
Last verified2026-10

Same operator

Other Samsung Electronics Fabs

Same type, in the US

Other US DRAM Fabs

Record

Dataset Record

Dataset
SemiconductorX fab dataset (fabs2026), row FAB210
Sources
See the source link in the record
Last verified
2026-10