Semiconductor Advanced Packaging
Advanced packaging has emerged as a strategic enabler for semiconductor scaling in the post-Moore’s Law era. Rather than shrinking transistors alone, advanced packaging integrates multiple dies — often built on different process nodes — into a single high-performance system. These techniques increase I/O density, bandwidth, and functionality while addressing power and thermal challenges. Advanced packaging is essential for AI accelerators, GPUs, HPC processors, and high-bandwidth memory (HBM) stacks, making it one of the fastest-growing segments in the semiconductor supply chain.
Role in the Supply Chain
- Provides higher I/O density and bandwidth than traditional wire bonding or flip-chip.
- Enables heterogeneous integration of logic, memory, and specialty dies (RF, analog, photonics).
- Supports chiplet architectures, reducing cost and improving flexibility in design.
- Critical for AI, HPC, and datacenter workloads where thermal and interconnect bottlenecks dominate.
Advanced Packaging Methods
- Fan-Out Wafer-Level Packaging (FOWLP): Redistributes I/O directly on wafer, eliminating need for substrates. Examples: TSMC InFO, ASE FOCoS.
- 2.5D Packaging: Uses silicon interposers to connect logic and memory dies with thousands of micro-bumps. Examples: TSMC CoWoS, Intel EMIB.
- 3D IC Stacking: Vertical die stacking using through-silicon vias (TSVs) or hybrid bonding. Examples: Intel Foveros, Samsung X-Cube, Micron HBM.
- Hybrid Bonding: Copper-to-copper direct bonding enabling ultra-fine pitch; basis for future HBM and AI chips.
- Chiplet Integration: Partitioning designs into modular dies that can be mixed and matched; AMD pioneered with Epyc CPUs.
Advanced Packaging Mapping
| Method | Function | Key Vendors | Notes |
|---|---|---|---|
| Fan-Out (FOWLP) | Redistribute I/O at wafer level | TSMC (InFO), ASE, Amkor | High-performance smartphones, RF devices |
| 2.5D Interposers | Logic-memory integration via interposer | TSMC (CoWoS), Intel (EMIB), ASE | Used in GPUs and AI accelerators with HBM |
| 3D Stacking | Vertical stacking with TSVs | Intel (Foveros), Samsung (X-Cube), Micron (HBM) | Enables ultra-high bandwidth memory systems |
| Hybrid Bonding | Direct Cu-Cu bonding | TSMC, Intel, Samsung, ASE | Enabler for fine-pitch 3D integration |
| Chiplets | Partitioned dies integrated in package | AMD, Intel, TSMC, ASE | Flexibility in mixing nodes and functions |
Risks & Bottlenecks
- Thermal Challenges: Stacked dies generate heat density beyond traditional cooling solutions.
- Interconnect Yield: TSV and hybrid bonding require near-zero defect rates.
- Cost: Advanced packaging can rival wafer fab costs per chip.
- Supplier Capacity: Advanced packaging largely concentrated in TSMC, Intel, Samsung, and a few OSATs.
KPIs to Track
- Bandwidth (GB/s): Interconnect performance between dies.
- I/O Density: Connections per mm² enabled by packaging method.
- Thermal Resistance (°C/W): Heat dissipation efficiency.
- Yield (%): Success rate of multi-die integration without failure.
Market Outlook
The advanced packaging market was valued at ~$30B in 2023 and is projected to exceed $65B by 2030, with ~11% CAGR. Growth is driven by AI accelerators, HPC, and chiplet adoption. TSMC dominates with CoWoS and InFO, Intel with EMIB and Foveros, while OSATs (ASE, Amkor, JCET) expand in fan-out and 2.5D. Hybrid bonding is poised to become the mainstream interconnect for 3D HBM and chiplets post-2025.
FAQs
- Why is advanced packaging so important now? – Transistor scaling alone no longer delivers sufficient performance; packaging enables system-level scaling.
- What’s the difference between 2.5D and 3D? – 2.5D uses an interposer to place dies side-by-side; 3D stacks dies vertically with TSVs or hybrid bonding.
- Are chiplets cheaper? – Yes, they allow smaller dies on mature nodes to be combined with advanced-node logic, reducing cost and improving yield.
- Who leads in advanced packaging? – TSMC (CoWoS, InFO), Intel (EMIB, Foveros), and Samsung (X-Cube) are technology leaders; ASE and Amkor lead in OSAT adoption.
