SemiconductorX > Fab & Assembly > GlobalFoundries Burlington Fab 9 (SiGe/BiCMOS)
GlobalFoundries Burlington Fab 9 (SiGe/BiCMOS)
[Last updated: Apr 2026]
This semiconductor fab is located in Essex Junction, USA.
| Fab: | GlobalFoundries Burlington Fab 9 (SiGe/BiCMOS) Gigafactory |
| Company: | GlobalFoundries |
| Owner: | Mubadala (UAE) |
| City: | Essex Junction |
| State: | Vermont |
| Country: | USA |
| Geopolitical: | US Domestic (LOW risk) | Node/Line: | 130-180nm BiCMOS |
| Category: | Specialty |
| Wafer size: | 200.00 nm |
| Product: | RF chips, DARPA programs, SiGe |
| Fab type: | Specialty |
| Status: | Operational |
| Capacity: | 10 kWSPM |
| Customers: | US DoD, IBM legacy programs |
Notes: Former IBM fab; unique SiGe/BiCMOS capability; US defense critical
source: GF specialty fabs data